JFET-PMOS technology, in the design of monolithic preamplifier systems for multielectrode detectors

Author

Buttler, W. ; Vogt, H. ; Lutz, G. ; Manfredi, P.F. ; Speziali, V.

Author_Institution

Fraunhofer Inst. fuer Mikroelektronische Schaltungen & Syst., Duisburg, Germany

Volume

38

Issue

2

fYear

1991

fDate

4/1/1991 12:00:00 AM

Firstpage

69

Lastpage

76

Abstract

Some basic steps in the development of a low-noise monolithic preamplifier system for multielectrode detectors are reviewed. Some of these steps refer to the realization of an effective filter on the monolithic chip. Others were oriented toward arriving at a technology suitable for a low-noise design. A nonhomogeneous monolithic process combining N- and P-channel JFET and N- and P-channel MOS on the same substrate meets the objective. Radiation hardening considerations restricted the design to two device categories only, NJFET and PMOS. As a preliminary result of the effort in the areas of filter design and technology development, a 64-channel preamplifier system for microstrip detectors is described

Keywords

MOS integrated circuits; junction gate field effect transistors; nuclear electronics; position sensitive particle detectors; preamplifiers; 64-channel preamplifier; JFET; JFET-PMOS technology; MOS; NJFET; PMOS; filter design; low-noise; microstrip detectors; monolithic chip; monolithic preamplifier; multielectrode detectors; nonhomogeneous monolithic process; CMOS process; CMOS technology; Detectors; Filters; JFETs; MOSFETs; Microstrip; Preamplifiers; Radiation hardening; Substrates;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.289265

Filename

289265