Evaluation of LDD MOSFET´s based on hot-electron-induced degradation

Hot-electron-induced device degradation in LDD MOSFET´s is thoroughly studied. Conventional ways to characterize device degradation, i.e., threshold shift and transconductance reduction, are not suitable for LDD MOSFET´s due to the nature of degradation in such devices. Using a current-drive degradation criterion, it is shown that LDD MOSFET´s have little net advantage over conventional MOSFET´s in terms of hot-electron-induced long-term degradation.