• DocumentCode
    1096740
  • Title

    Vertical FET´s in GaAs

  • Author

    Rav-Noy, Z. ; Schreter, U. ; Mukai, S. ; Kapon, E. ; Smith, J.S. ; Chiu, L.C. ; Margalit, S. ; Yariv, A.

  • Author_Institution
    California Institute of Technology, Pasadena, CA
  • Volume
    5
  • Issue
    7
  • fYear
    1984
  • fDate
    7/1/1984 12:00:00 AM
  • Firstpage
    228
  • Lastpage
    230
  • Abstract
    Vertical FET´s in GaAlAs material systems have been fabricated. The present structure makes possible extremely short (less than 1000-Å) channel devices which are beyond the reach of optical lithographic processes. Devices with transconductance gmas high as 280 mS/mm have been obtained.
  • Keywords
    Electrons; Gallium arsenide; Graphics; Heterojunctions; Microwave FETs; Molecular beam epitaxial growth; Optical materials; Optical saturation; Silicon; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1984.25899
  • Filename
    1484275
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1096740