DocumentCode
1096871
Title
The SIT Saturation protected bipolar transistor
Author
Wilamowski, B.M. ; Mattson, R.H. ; Staszak, Z.J.
Author_Institution
University of Arizona, Tucson, AZ
Volume
5
Issue
7
fYear
1984
fDate
7/1/1984 12:00:00 AM
Firstpage
263
Lastpage
265
Abstract
A novel concept for a transistor was invented, introducing an idea for protection against saturation. It involves the use of a static induction transistor (SIT). Simulation showed encouraging switching times when compared to similar gates without protection, while the charge storage was practically eliminated.
Keywords
Bipolar transistors; Circuit simulation; Diffusion processes; P-n junctions; Propagation delay; Protection; Pulse inverters; Semiconductor process modeling; Very large scale integration; Voltage;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/EDL.1984.25912
Filename
1484288
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