• DocumentCode
    1096872
  • Title

    Photoresponse characteristics of thin-film nickel-nickel oxide-nickel tunneling junctions

  • Author

    Marshalek, Robert G. ; Davidson, Frederic M.

  • Author_Institution
    John Hopkins Univ., Baltimore, MD, USA
  • Volume
    19
  • Issue
    4
  • fYear
    1983
  • fDate
    4/1/1983 12:00:00 AM
  • Firstpage
    743
  • Lastpage
    754
  • Abstract
    Photoinduced tunneling currents in thin-film Ni-NiO-Ni tunneling junctions were measured as a function of photon energy over the range 2.0 eV \\leq hf \\leq 2.7 eV. The photoresponse mechanism was found to be consistent with a photon assisted tunneling mechanism. Inelastic electron-electron collisions were found to strongly influence the photoassisted tunneling currents.
  • Keywords
    Bibliographies; MIM devices; Nickel materials/devices; Optical radiation effects; Thin-film devices; Tunnel devices/effects; Diodes; Electrons; Energy measurement; Frequency; Insulation; MIM devices; Nonlinear optics; Potential energy; Transistors; Tunneling;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.1983.1071914
  • Filename
    1071914
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1096872