DocumentCode
1097029
Title
Very low threshold InGaAsP mesa laser
Author
Chen, T.R. ; Chiu, L.C. ; Yu, K.L. ; Koren, U. ; Hasson, A. ; Margalit, S. ; Yariv, A.
Author_Institution
California Inst. of Technology, CA, USA
Volume
19
Issue
5
fYear
1983
fDate
5/1/1983 12:00:00 AM
Firstpage
783
Lastpage
785
Abstract
Very low threshold currents InGaAsP/InP terrace mesa (T-ME) lasers with an unpassivated surface have been fabricated on semi-insulating (SI) InP substrates. Fabrication of the lasers involves a single-step liquid phase epitaxial (LPE) growth and a simple etching process. Lasers operating in the fundamental transverse mode with threshold currents as low as 6.3 mA (for a cavity length of 250 μm) have been obtained. Comparison between the unpassivated lasers and those passivated using the mass transport technique is described.
Keywords
Gallium materials/lasers; Indium materials/devices; Degradation; Etching; Indium phosphide; Laser modes; Leakage current; Radiative recombination; Semiconductor lasers; Substrates; Surface emitting lasers; Threshold current;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/JQE.1983.1071930
Filename
1071930
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