• DocumentCode
    1097432
  • Title

    Admittance measurements on In0.53Ga0.47As/InP:Fe-JFET´s and GaAs-MESFET´s

  • Author

    Albrecht, H.

  • Author_Institution
    Siemens Research Laboratories, Munchen, West Germany
  • Volume
    5
  • Issue
    10
  • fYear
    1984
  • fDate
    10/1/1984 12:00:00 AM
  • Firstpage
    409
  • Lastpage
    412
  • Abstract
    Admittance measurements as a function of frequency and voltage on field-effect transistor (FET) channels of In0.53Ga0.47As/InP: Fe-JFET´s and GaAs-MESFET´s are reported. Theoretical and experimental investigations of the conductance and susceptance show that only three independent parameters, like space-charge capacitance, series resistance, and differential resistance, are needed to describe the measured results in the entire voltage and frequency range of investigation.
  • Keywords
    Admittance measurement; Capacitance measurement; Contact resistance; Electrical resistance measurement; FETs; Frequency measurement; Gallium arsenide; Indium phosphide; Parasitic capacitance; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1984.25966
  • Filename
    1484342
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1097432