Source and drain resistance determination for MOSFET´s

A new method has been developed for determining the source and drain resistances of MOSFET´s from 2-D process and device modeling. The method connects the current predicted from a standard drain current formula to an approximate current computed from the output of a 2-D device simulator. This approximate current is compared with the exact current calculated from the 2-D device simulator to locate the effective edges of the inversion channel. The source/drain resistance for use in the standard formula is then computed from the quasi-Fermi levels at these effective channel edges. Good agreement is obtained with source/drain resistances extracted from experimental ID-VG data.