A 100-GHz monolithic cascode InAlAs/InGaAs HEMT oscillator

Author

Kwon, Youngwoo ; Pavlidis, Dimitris ; Marsh, Phil ; Brock, Tim ; Streit, Dwight C.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA

Volume

4

Issue

5

fYear

1994

fDate

5/1/1994 12:00:00 AM

Firstpage

135

Lastpage

137

Abstract

The design, fabrication, and experimental characteristics of a 100-GHz monolithic cascode HEMT oscillator are presented. A cascode pair of InAlAs/InGaAs HEMT´s has been used as the active cell to enhance the negative resistance so that more process tolerance can be achieved. The monolithic circuit oscillates around 100 GHz with an output power of 2 dBm at a drain bias voltage as small as 0.9 V. This is the first demonstration of cascode HEMT oscillators at W-band.<>

Keywords

III-V semiconductors; MMIC; active networks; aluminium compounds; field effect integrated circuits; gallium arsenide; high electron mobility transistors; indium compounds; microwave oscillators; negative resistance; 100 GHz; EHF; InAlAs-InGaAs; MIMIC; MM-wave IC; W-band; cascode HEMT oscillators; cascode HEMT pair; fabrication; monolithic circuit; negative resistance; Character recognition; Circuit synthesis; Circuit testing; Frequency; HEMTs; Indium compounds; Indium gallium arsenide; Negative feedback; Power generation; Voltage-controlled oscillators;

fLanguage

English

Journal_Title

Microwave and Guided Wave Letters, IEEE

Publisher

ieee

ISSN

1051-8207

Type

jour

DOI

10.1109/75.289518

Filename

289518