A Novel Planar Power MOSFET With Laterally Uniform Body and Ion-Implanted JFET Region

Author

Ng, Jacky C W ; Sin, Johnny K O ; Guan, Lingpeng

Author_Institution

Hong Kong Univ. of Sci. & Technol., Kowloon

Volume

29

Issue

4

fYear

2008

fDate

4/1/2008 12:00:00 AM

Firstpage

375

Lastpage

377

Abstract

A novel sub-20-V planar power MOSFET using ion implantation to form the body and JFET regions is proposed and experimentally demonstrated. The fabricated novel device has a breakdown voltage of 14 V and a threshold voltage of 0.57 V. Compared with conventional planar vertical double-diffused MOS devices, the specific on-resistance of the novel device is reduced by 32% because of the reduced JFET resistance. The threshold- voltage variation of the novel device is also characterized. The standard deviation of the threshold voltage is reduced from 36 mV of the conventional device to 10 mV of the novel device. This is because the channel region of the novel device is uniformly doped by using ion implantation. The gate-drain charge density is similar to that of the conventional device. The novel device is very promising for sub-20-V dc/dc conversion applications.

Keywords

MIS devices; MOSFET; ion implantation; junction gate field effect transistors; JFET regions; JFET resistance; gate-drain charge density; ion implantation; ion-implanted JFET region; laterally uniform body; planar power MOSFET; planar vertical double-diffused MOS devices; threshold-voltage variation; On-resistance; planar power MOSFET; threshold-voltage variation; vertical double-diffused MOS (VDMOS);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2008.917818

Filename

4470146