• DocumentCode
    1098388
  • Title

    Radiation Damage in Power MOSFET Optocouplers

  • Author

    Johnston, Allan H. ; Miyahira, Tetsuo F.

  • Author_Institution
    California Inst. of Technol., Pasadena
  • Volume
    54
  • Issue
    4
  • fYear
    2007
  • Firstpage
    1104
  • Lastpage
    1109
  • Abstract
    Radiation damage is investigated in optocouplers with power MOSFET output stages. They differ from conventional optocouplers, incorporating an intermediate photovoltaic chip to allow the MOSFET gate voltage to be controlled by the light-emitting diode. These optocouplers are sensitive to ionization as well as displacement damage, and can fail catastrophically from degradation in either the power MOSFET or the LED. Radiation testing must take both mechanisms into account.
  • Keywords
    ionisation; light emitting diodes; optical couplers; power MOSFET; proton effects; LED; gate voltage; intermediate photovoltaic chip; ionization; light-emitting diode; power MOSFET optocouplers; proton radiation damage; Degradation; Ionization; Light emitting diodes; Lighting control; MOSFET circuits; Photovoltaic systems; Power MOSFET; Solar power generation; Testing; Voltage control; MOSFET; optocoupler; proton damage; space radiation effects;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2007.903172
  • Filename
    4291739
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1098388