• DocumentCode
    1098449
  • Title

    GaAs optoelectronic integrated light sources

  • Author

    Matsueda, Hideaki ; Sasaki, Shinya ; Nakamura, Michiharu

  • Author_Institution
    Hitachi, Ltd., Kokubunji, Tokyo, Japan
  • Volume
    1
  • Issue
    1
  • fYear
    1983
  • fDate
    3/1/1983 12:00:00 AM
  • Firstpage
    261
  • Lastpage
    269
  • Abstract
    A comprehensive discussion on key technology needed to realize GaAs optoelectronic integrated circuits (OEIC´s) is given, including heat dissipation, reflector formation, controlled diffusion, surface steps, high density electronic circuits, and structures for integration. Examples of horizontal-type integration as well as vertical type are compared, with some details of optical and electronic performance.
  • Keywords
    Electrooptic materials/devices; Gallium materials/lasers; Integrated optics; Electronic circuits; FETs; Ferroelectric materials; Gallium arsenide; Holographic optical components; Holography; Integrated optics; Light sources; Optical materials; Physics;
  • fLanguage
    English
  • Journal_Title
    Lightwave Technology, Journal of
  • Publisher
    ieee
  • ISSN
    0733-8724
  • Type

    jour

  • DOI
    10.1109/JLT.1983.1072064
  • Filename
    1072064
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1098449