Modeling of the optical properties of a barrier, reservoir, and quantum-well electron transfer structure

Author

Wang, Jin ; Leburton, J.P. ; Zucker, J.E.

Author_Institution

Beckman Inst. for Adv. Sci. & Technol., Illinois Univ., Urbana, IL, USA

Volume

30

Issue

4

fYear

1994

fDate

4/1/1994 12:00:00 AM

Firstpage

989

Lastpage

996

Abstract

We present a novel numerical simulator, OPCONS, for the analysis of the optical properties of In_xGa_1-xAs/In_1-yAl_yAs multiple-quantum-well heterostructures with tunable charge density. The influence of carriers and dopant ion charges on the electronic properties are simulated with a self-consistent Poisson-Schrodinger solver. The calculated optical constants of the quantum well reproduce well the experimental electrooptic characteristics. The code implements the drift-diffusion and thermionic emission currents to calculate the I-V characteristics and shows a good agreement with the experimental data

Keywords

III-V semiconductors; Schrodinger equation; aluminium compounds; gallium arsenide; indium compounds; optical constants; semiconductor device models; semiconductor quantum wells; thermionic emission; I-V characteristics; In_xGa_1-xAs/In_1-yAl_yAs; InGaAs-InAlAs; OPCONS; barrier; carriers; dopant ion charges; drift-diffusion; electronic properties; electrooptic characteristics; multiple-quantum-well heterostructures; numerical simulator; optical constants; optical properties; quantum-well electron transfer structure; reservoir; self-consistent Poisson-Schrodinger solver; thermionic emission currents; tunable charge density; Electron optics; High speed optical techniques; Optical modulation; Optical refraction; Optical saturation; Optical variables control; Quantum well devices; Quantum wells; Refractive index; Reservoirs;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.291386

Filename

291386