• DocumentCode
    1098739
  • Title

    Degradation modes in planar structure in0.53Ga0.47As photodetectors

  • Author

    Tashiro, Yoshiharu ; Taguchi, Kenko ; Sugimoto, Yoshimasa ; Torikai, Toshitaka ; Nishida, Katsuhiko ; Taguchi, Katsuhisa ; Sugimoto, Yoshiki ; Torikai, T. ; Nishida, Keisuke

  • Author_Institution
    Nippon Electric Company, Ltd., Kawasaki, Japan
  • Volume
    1
  • Issue
    1
  • fYear
    1983
  • fDate
    3/1/1983 12:00:00 AM
  • Firstpage
    269
  • Lastpage
    272
  • Abstract
    Recoverable and nonrecoverable degradation modes have been found by forced degradation tests in In0.53Ga0.47As heterojunction photodetectors. In0.76Ga0.24As0.55P0.45cap layer and In0.53Ga0.47As light-absorption layer were grown by liquid-phase epitaxy (LPE) on a
  • Keywords
    Dark current; Degradation; Diodes; Gold; Heterojunctions; Indium phosphide; Life testing; Photodetectors; Photodiodes; Plasma temperature;
  • fLanguage
    English
  • Journal_Title
    Lightwave Technology, Journal of
  • Publisher
    ieee
  • ISSN
    0733-8724
  • Type

    jour

  • DOI
    10.1109/JLT.1983.1072092
  • Filename
    1072092
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1098739