• DocumentCode
    1098764
  • Title

    Characteristics of MOSFET prepared on Si/MgO.Al2O3/SiO2/Si structure

  • Author

    Hokari, Yasuaki ; Mikami, Masao ; Egami, Koji ; Tsuya, Hideki ; Kanamori, Mitsuru ; Kanamori, Masaru

  • Author_Institution
    NEC Corporation, Kanagawa, Japan
  • Volume
    32
  • Issue
    2
  • fYear
    1985
  • fDate
    2/1/1985 12:00:00 AM
  • Firstpage
    253
  • Lastpage
    257
  • Abstract
    A new silicon on insulator (SOI) wafer with epitaxial-Si/ epitaxial-MgO.Al2O3(0.1 µm)/SiO2(0.5 µm)/
  • Keywords
    Annealing; Electron mobility; FETs; MOSFET circuits; Molecular beam epitaxial growth; Parasitic capacitance; Semiconductor films; Silicon compounds; Silicon on insulator technology; Substrates;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1985.21938
  • Filename
    1484685
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1098764