• DocumentCode
    1099132
  • Title

    Why a Real Non-Uniform Electric Field in Nuclear Detector Arrays Can Improve the Energy Resolution

  • Author

    Zumbiehl, A. ; Hage-Ali, M.

  • Author_Institution
    Univ. Claude Bernard, Villeurbanne
  • Volume
    54
  • Issue
    4
  • fYear
    2007
  • Firstpage
    1421
  • Lastpage
    1428
  • Abstract
    Owing to their intrinsic properties, nuclear imaging systems based on room temperature semiconductor materials are still the topic of numerous research and development schemes. Due to their high atomic number and their high resistivity, CdTe and CdZnTe (CZT) have been used extensively in these systems, especially for astrophysics and medical applications. However, the shape of the electric field has always been poorly considered, i.e., assumed uniform, or with minor implications on gamma-ray spectra - and this is far from the real situation. Consequently, real electric field profiles measured by Pockels effect are presented in this work. Furthermore, we develop a formalism integrating non-uniform electric field profiles. Results are presented in term of energy resolution, which is of utmost importance in nuclear imaging, mainly for counting efficiency and contrast. Finally, the analytical results are completed and confirmed with Monte Carlo simulations. Contrary to generally accepted ideas, a real and non-uniform decreasing electric field can improve the energy resolution, especially for thick detector arrays. Therefore in ldquoclassicalrdquo simulations of nuclear detection the value of the parameter mutau , which represents the charge transport properties, is excessive to ldquoagree with the experimental datardquo. This work gives an answer to this incoherence, and finally shows that realistic nuclear detection results can be simulated with realistic mutau values and non-uniform electric field, with an example of geometrical optimization.
  • Keywords
    II-VI semiconductors; Pockels effect; cadmium compounds; semiconductor counters; zinc compounds; CdTe - Interface; CdZnTe - Interface; Monte Carlo simulations; Pockels effect; energy resolution; gamma-ray spectra; nonuniform electric field; nuclear detector arrays; nuclear imaging systems; room temperature semiconductor materials; Astrophysics; Conductivity; Detectors; Energy resolution; Nonuniform electric fields; Nuclear imaging; Research and development; Semiconductor materials; Sensor arrays; Temperature; CdTe; CdZnTe (CZT); detector arrays; electric field; energy resolution; semiconductor;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2007.902355
  • Filename
    4291807