DocumentCode
1099186
Title
Mobility degradation in very thin Oxide p-channel MOSFET´s
Author
Su, Hao-Quan ; Wei, Che-Chia ; Ma, Tso-Ping
Volume
32
Issue
3
fYear
1985
fDate
3/1/1985 12:00:00 AM
Firstpage
559
Lastpage
561
Abstract
The effective hole mobility in large-area p-channel MOSFET´s decreases systematically over a wide range of oxide fields as the gate oxide thickness decreases from 240 to 31 Å. A scattering mechanism based on the variations of the gate-charge-induced Coulomb scattering potential in the channel resulting from gate oxide thickness and/or structural fluctuations over the gate area is proposed to explain the results.
Keywords
Capacitance-voltage characteristics; Charge measurement; Current measurement; Data mining; Degradation; Leakage current; MOSFET circuits; Thickness measurement; Tunneling; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1985.21977
Filename
1484723
Link To Document