• DocumentCode
    1099460
  • Title

    A high short-circuit current inversion layer poly-Si solar cell

  • Author

    Chang, C.Y. ; Fang, Y.K. ; Wu, B.S.

  • Author_Institution
    National Cheng Kung University Tainan, Taiwan, Republic of China
  • Volume
    32
  • Issue
    3
  • fYear
    1985
  • fDate
    3/1/1985 12:00:00 AM
  • Firstpage
    712
  • Lastpage
    713
  • Abstract
    An IL/MIS poly-Si solar cell is fabricated. Its short-circuit current reveals a very high value of 32.8 mA/cm2. During fabrication, the front side of poly-Si wafer has to be polished for 2 min to obtain a mirror-like surface. The thin oxide was grown at 400°C in N2/O2ambient, and SiO film was evaporated at a rate of 5 Å/s which produces the highest VOCand ISC. The grid width and grid spacing has been optimized experimentally to be 7 and 100 µm, respectively. Under AM1 light intensity, the best cell shows a conversion efficiency of 10.41 percent (total area), short-circuit current density of 32.8 mA/cm2, and open-circuit voltage of 0.544 V.
  • Keywords
    Current density; Fabrication; Grain boundaries; Optical films; Photovoltaic cells; Potential energy; Schottky diodes; Surface morphology; Surface treatment; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1985.22003
  • Filename
    1484749
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1099460