DocumentCode
1099724
Title
Length dependence of threshold current in multiple quantum well lasers
Author
Wilcox, J.Z. ; Peterson, Gilbert L. ; Ou, Sin-Liang ; Yang, Jie J. ; Jansen, Maarten ; Schechter, D.
Author_Institution
Space & Technol. Group, TRW, Redondo Beach, CA
Volume
24
Issue
19
fYear
1988
fDate
9/15/1988 12:00:00 AM
Firstpage
1218
Lastpage
1220
Abstract
The threshold current density of single-quantum-well lasers increases at short laser lengths more rapidly than for multiple-well lasers. Using microscopic gain calculations, these differences are shown to be a natural consequence of the nonlinear gain/current relation associated with high electron concentrations in thin wells. The threshold current shows a minimum that depends on facet reflectivities and number of wells
Keywords
semiconductor junction lasers; semiconductor quantum wells; electron concentrations; facet reflectivities; laser lengths; microscopic gain calculations; multiple quantum well lasers; nonlinear gain/current relation; thin wells; threshold current;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
Filename
29169
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