• DocumentCode
    109973
  • Title

    400-A (Pulsed) Vertical GaN p-n Diode With Breakdown Voltage of 700 V

  • Author

    Kizilyalli, Isik C. ; Edwards, Andrew P. ; Hui Nie ; Phong Bui-Quang ; Disney, Don ; Bour, David

  • Author_Institution
    Avogy, Inc., San Jose, CA, USA
  • Volume
    35
  • Issue
    6
  • fYear
    2014
  • fDate
    Jun-14
  • Firstpage
    654
  • Lastpage
    656
  • Abstract
    There is a great interest in monolithic GaN semiconductor devices with high current capability for power electronics. In this letter, large area vertical GaN p-n diodes fabricated on bulk GaN substrates are discussed. Diodes with areas as large as 16 mm2 with breakdown voltages exceeding 700 V and pulsed (100 μs) currents approaching 400 A are reported. This is made possible for the first time in part due to the recent availability of improved quality bulk GaN substrates.
  • Keywords
    III-V semiconductors; gallium compounds; power semiconductor diodes; semiconductor device breakdown; wide band gap semiconductors; GaN; current 400 A; monolithic semiconductor devices; power electronics; pulsed vertical p-n diode; time 100 mus; voltage 700 V; Current measurement; Gallium nitride; Schottky diodes; Silicon; Substrates; Gallium nitride; bulk GaN substrates; power diodes; power-semiconductor devices; scaling; scaling.;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2014.2319214
  • Filename
    6812134
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=109973