• DocumentCode
    1100054
  • Title

    High contrast-ratio electroabsorptive GaInAs/InP quantum well modulator

  • Author

    Guy, D.R.P. ; Taylor, L.L. ; Besgrove, D.D. ; Apsley, N.

  • Author_Institution
    R. Signals & Radar Establ., Great Malvern
  • Volume
    24
  • Issue
    19
  • fYear
    1988
  • fDate
    9/15/1988 12:00:00 AM
  • Firstpage
    1253
  • Lastpage
    1255
  • Abstract
    A clear quantum-confined Stark shift is reported in a 150 quantum-well GaInAs/InP PIN diode grown by atmospheric pressure MOCVD. 4.1 dB modulation (2.6:1 contrast ratio, 4.9 dB insertion loss) is achieved in perpendicular (mesa) geometry at 1.59 μm wavelength in an electric field of ~1.3×105 V cm-1. Growth is on a semi-insulating rather than a p+-substrate, to eliminate the effects of free-carrier absorption
  • Keywords
    III-V semiconductors; electro-optical devices; gallium arsenide; indium compounds; optical modulation; semiconductor quantum wells; 1.59 micron; 4.9 dB; GaInAs-InP; MQW; PIN diode; atmospheric pressure MOCVD; electroabsorptive type; fabrication; high contrast ratio; insertion loss; mesa geometry; quantum well modulator; quantum-confined Stark shift; semiinsulating substrate;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • Filename
    29194
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1100054