• DocumentCode
    110066
  • Title

    Measurement of Johnson Noise Induced by p-Stops in Silicon Microstrip Detectors

  • Author

    Giacomini, G. ; Bosisio, Luciano ; Rashevskaya, Irina

  • Author_Institution
    FBK-CMM-SRS (Fondazione Bruno Kessler-Center for Mater. & Microsyst.-Silicon Radiat. Sensors), Trento, Italy
  • Volume
    60
  • Issue
    5
  • fYear
    2013
  • fDate
    Oct. 2013
  • Firstpage
    4022
  • Lastpage
    4025
  • Abstract
    We report on noise measurements performed on the n-side of double-sided, AC-coupled, punch-through biased silicon strip detectors. The noise has been measured over a wide range of peaking times and bias voltages, allowing the disentanglement of two excess noise terms, one related to the p-stops surrounding the strips and the other related to the electron accumulation layer at the Si/ SiO2 interface.
  • Keywords
    microstrip components; silicon compounds; silicon radiation detectors; thermal noise; Johnson noise measurements; Si-SiO2; bias voltages; double-sided AC-coupled punch-through biased silicon strip detectors; electron accumulation layer; noise terms disentanglement; p-stops; peaking times; silicon microstrip detectors; Microstrip; Noise; Noise measurement; Sensors; Silicon; Strips; Voltage measurement; Johnson noise; microstrip silicon detectors; noise; p-spray; p-stop; silicon radiation detectors; thermal noise;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2013.2276069
  • Filename
    6588941
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=110066