DocumentCode
1100757
Title
The Hooge parameters for n- and p-type Hg1-x Cdx Te
Author
Zhu, Xi-chen ; Wu, Xiaolan ; Van Der, Ziel A. ; Kelso, E.G.
Author_Institution
Kunming Institute of Physics, Kunming, Peoples Republic of China
Volume
32
Issue
7
fYear
1985
fDate
7/1/1985 12:00:00 AM
Firstpage
1353
Lastpage
1354
Abstract
The values of the electron effective mass 
in Hg1-x Cdx Te have been calculated for 
= 0.20, 0.30, 0.40. Using the Debye temperature θD for CdTe, the values of the Hooge parameter for Hg1-x Cdx Te have been estimated as a function of and the temperature 
. In view of the uncertainty in θD , the estimate is probably correct within a factor of 2-3. We have also directly calculated θD for Hg1-x Cdx Te and its associated Hooge parameters as a function of ; except for a possible temperature dependence of θD , the results should be correct near room temperature.
in Hg = 0.20, 0.30, 0.40. Using the Debye temperature θ and the temperature . In view of the uncertainty in θ ; except for a possible temperature dependence of θKeywords
Density estimation robust algorithm; Effective mass; Electrons; Frequency; Mercury (metals); Resistors; Semiconductor device noise; Temperature dependence; Temperature distribution; Uncertainty;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1985.22123
Filename
1484869
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