Passive FM locking in InGaAsP semiconductor lasers

Author

Tiemeijer, Luuk F. ; Kuindersma, P.I. ; Thijs, Peter J A ; Rikken, Geert L J

Author_Institution

Philips Res. Lab., Eindhoven, Netherlands

Volume

25

Issue

6

fYear

1989

fDate

6/1/1989 12:00:00 AM

Firstpage

1385

Lastpage

1392

Abstract

Passive FM locking of the longitudinal modes in MOVPE (metalorganic vapor-phase epitaxy)-grown InGaAsP semiconductor lasers due to four-wave mixing is discussed. Due to the locking, the lasing field closely resembles a single-frequency modulated wave with a modulation frequency equal to the cavity mode spacing of about 160 GHz, when the lasers are well above threshold. The existence of this FM wave is demonstrated by comparing the fundamental and the second-harmonic spectrum. A simplified analysis of the FM operation which explains the experimental data rather well is presented

Keywords

III-V semiconductors; frequency modulation; gallium arsenide; gallium compounds; indium compounds; laser mode locking; optical harmonic generation; semiconductor junction lasers; 160 GHz; InGaAsP semiconductor lasers; MOVPE; cavity mode spacing; four-wave mixing; lasing field; longitudinal modes; modulation frequency; passive FM locking; second-harmonic spectrum; single-frequency modulated wave; Dispersion; Epitaxial growth; Epitaxial layers; Equations; Four-wave mixing; Frequency modulation; Laser mode locking; Laser modes; Mirrors; Optical modulation; Power lasers; Semiconductor lasers;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.29273

Filename

29273