• DocumentCode
    1100914
  • Title

    Vertical smear noise model for MOS-type color imager

  • Author

    Ohba, Shinya ; Nakai, Masaaki ; Ando, Haruhisa ; Takahashi, Kenji ; Masuda, Michio ; Takemoto, Iwao ; Fujita, Tsutomu

  • Author_Institution
    Central Research Laboratory, Hitachi Ltd., Tokyo, Japan
  • Volume
    32
  • Issue
    8
  • fYear
    1985
  • fDate
    8/1/1985 12:00:00 AM
  • Firstpage
    1407
  • Lastpage
    1410
  • Abstract
    The smear noise in an MOS imager was analyzed based on the three types of generation mechanisms: capacitive coupling, carrier diffusion, and light leakage. The measured smear performance was explained by these analyses. The results lead to the conclusion that the main cause of smear in an MOS imager is due to the component of light leakage.
  • Keywords
    Capacitance; Charge coupled devices; Color; Colored noise; Consumer products; Diodes; Laboratories; Optical coupling; Photodiodes; Solid state circuits;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1985.22137
  • Filename
    1484883
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1100914