DocumentCode
1101763
Title
A semi-two-dimensional numerical scheme for solving impurity profile in semiconductors
Author
Yang, Y.Y. ; Kyung, C.M.
Author_Institution
Korea Advanced Institute of Science and Technology, Seoul, Korea
Volume
32
Issue
9
fYear
1985
fDate
9/1/1985 12:00:00 AM
Firstpage
1887
Lastpage
1889
Abstract
An efficient numerical scheme for obtaining the two-dimensional impurity profile in semiconductors due to thermal diffusion is described. A unique combination of the alternating direction implicit (ADI) method and Gaussian elimination has resulted in a reduction of CPU time for most diffusion processes by a factor of ≥ 3, compared to other iteration schemes such as successive overrelaxation (SOR) or Stone´s iterative method without additional storage requirement.
Keywords
Central Processing Unit; Circuit simulation; Computational modeling; Diffusion processes; Electron devices; Insulation; Semiconductor impurities; Space technology; Substrates; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1985.22214
Filename
1484960
Link To Document