• DocumentCode
    1102287
  • Title

    Composite step-graded collector of InP/InGaAs/lnP DHBT for minimised carrier blocking

  • Author

    Chor, E.F. ; Peng, C.J.

  • Author_Institution
    Dept. of Electr. Eng., Nat. Univ. of Singapore, Singapore
  • Volume
    32
  • Issue
    15
  • fYear
    1996
  • fDate
    7/18/1996 12:00:00 AM
  • Firstpage
    1409
  • Lastpage
    1410
  • Abstract
    A composite step-graded collector of InP/InGaAs/InP DHBT has been investigated for minimised carrier blocking. The optimised collector has the following sub-layers: a 100 Å n- InGaAs layer; three 200 Å n- InGaAsP layers; and a 100 Å, n=3×1017 cm-3 InP layer, and the rest are n - InP. The InGaAsP layers should be chosen to give approximately equal band offset at the heterointerfaces
  • Keywords
    III-V semiconductors; carrier mobility; gallium arsenide; heterojunction bipolar transistors; indium compounds; semiconductor heterojunctions; 100 angstrom; 200 angstrom; DHBT; InP-InGaAs-InP; composite step-graded collector; double heterojunction; equal band offset; heterointerfaces; minimised carrier blocking;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19960889
  • Filename
    511151
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1102287