• DocumentCode
    1102500
  • Title

    Monolithic integration of a planar embedded InGaAs p-i-n detector with InP depletion-mode FET´s

  • Author

    Tell, Benjamin ; Liao, Andrew S.H. ; Goebeler, Kevin F Brown ; Bridges, Thomas J. ; Burkhardt, Gardner ; Chang, T.Y. ; Bergano, Neal S.

  • Author_Institution
    AT&T Bell Laboratories, Homedell, NJ
  • Volume
    32
  • Issue
    11
  • fYear
    1985
  • fDate
    11/1/1985 12:00:00 AM
  • Firstpage
    2319
  • Lastpage
    2321
  • Abstract
    We report the operation of a fully integrated p-i-n FET circuit based on a planar embedded In0.53Ga0.47As p-i-n detector and load resistor with InP depletion-mode FET´s. The structure employs selective growth of InGaAs on a semi-insulating InP substrate and selective ion implantation of Si and Be into the InP and InGaAs, respectively. For a 10-9bit error rate at 1.54 m, the circuit achieves a sensitivity of -34 dBm at 90 Mbit/s and -29.5 dBm at 295 Mbit/s.
  • Keywords
    Annealing; Bridge circuits; Detectors; Etching; FET circuits; Implants; Indium gallium arsenide; Indium phosphide; Monolithic integrated circuits; PIN photodiodes;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1985.22277
  • Filename
    1485023
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1102500