• DocumentCode
    1103142
  • Title

    Modified Face-Down Bonding of Ridge-Waveguide Lasers Using Hard Solder

  • Author

    Teo, J. W Ronnie ; Shi, X.Q. ; Yuan, S. ; Li, G.Y. ; Wan, Z.F.

  • Author_Institution
    Nanyang Technol. Univ., Singapore
  • Volume
    31
  • Issue
    2
  • fYear
    2008
  • fDate
    4/1/2008 12:00:00 AM
  • Firstpage
    159
  • Lastpage
    167
  • Abstract
    A modified face-down bonding technique of ridge-waveguide laser diodes (LDs) using 80Au20Sn solder has been performed. For ease of manufacturability, a bonding window with good bonding integrity and improved optical performance was determined. Metallographical investigation showed that the solder joint comprised of a layer of delta phase compound near the solder/heatsink interface, a layer of (Au,Ni)Sn intermetallic compound (IMC) at the solder/heatsink interface, and zeta´ phase Au/Sn compound at the center of the solder joint. The delta phase shifted to the interfaces after reflow was postulated by its lower surface tension than zeta´ phase Au/Sn compound. Good bonding integrity was observed with LD residues still adhering onto the bond pad after die shear testing. Scanning electron microscopy (SEM)/energy dispersive X-ray (EDX) analyses of the fracture surface showed that the fracture occurred within the LD, at the GaAs/SiN interface. LDs bonded with this modified bonding process achieved an optical improvement of 2.5-3X compared to the unbonded LDs due to its good thermal management. These bonded LDs further exhibited good long-term reliability with no significant degradation in optical performance and no significant microstructure evolution in the solder joint after 500 thermal cycling test.
  • Keywords
    III-V semiconductors; X-ray chemical analysis; bonding processes; fracture; gallium arsenide; gold alloys; heat sinks; laser reliability; optical fabrication; reflow soldering; ridge waveguides; scanning electron microscopy; semiconductor lasers; silicon compounds; solders; surface tension; tin alloys; waveguide lasers; AuSn; EDX; GaAs-SiN; SEM; bonding integrity; die shear testing; energy dispersive X-ray analysis; fracture surface; hard solder; intermetallic compound; long-term reliability; metallographical investigation; microstructure evolution; modified face-down bonding technique; optical performance; ridge-waveguide laser diodes; scanning electron microscopy; solder joint; solder-heatsink interface; surface tension; thermal cycling test; thermal management; Face-down bonding configuration; laser diode (LD); microassembly; optimal bonding window; reliability testing; solder preform;
  • fLanguage
    English
  • Journal_Title
    Electronics Packaging Manufacturing, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1521-334X
  • Type

    jour

  • DOI
    10.1109/TEPM.2008.919329
  • Filename
    4472224