• DocumentCode
    1103448
  • Title

    Effect of diffusion current on characterising the effective channel length of nanometre-scaled n-MOSFETs

  • Author

    Yeh, C.-C. ; Chen, Y.-Y. ; Neih, C.-F. ; Gong, J.

  • Author_Institution
    Nat. Tsing-Hua Univ., Hsinchu
  • Volume
    43
  • Issue
    17
  • fYear
    2007
  • Firstpage
    950
  • Lastpage
    951
  • Abstract
    The diffusion current in nanometre-scale MOSFETs operated in the triode region is no longer negligible. A factor of s(Idiff+Idrift)/Idrift is introduced in extracting the effective channel length and series resistance of the MOSFET with the commonly used shift and ratio method. The results reveal that the extracted value for s > 1 (considering the diffusion current) is closer to the actual situation than the extracted value with s= 1 (neglecting the diffusion current).
  • Keywords
    MOSFET; diffusion; electric resistance; nanoelectronics; channel length; diffusion current; nanometre-scaled n-MOSFET; series resistance;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20071232
  • Filename
    4293114
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1103448