A novel technology for a-Si TFT-LCD´s with buried ITO electrode structure

Author

Kawachi, Genshiro ; Kimura, Etsuko ; Wakui, Yoko ; Konishi, Nobutake ; Yamamoto, Hideaki ; Matsukawa, Yuka ; Sasano, Akira

Author_Institution

Hitachi Res. Lab., Hitachi Ltd., Ibaraki, Japan

Volume

41

Issue

7

fYear

1994

fDate

7/1/1994 12:00:00 AM

Firstpage

1120

Lastpage

1124

Abstract

A novel process technology for a-Si TFT-LCD´s with the buried ITO electrode (BI) structure was developed and applied to 10-in-diagonal LCD panels. By employing the BI structure, an aperture ratio of 29% was achieved in high resolution panels with a pixel size of 192 μ and the pixel defect density was reduced to about one third of the conventional structure. The defect reduction effect of the BI structure was also confirmed theoretically. The BI structure provides significant advantages for high-performance TFT-LCD´s

Keywords

amorphous semiconductors; electrodes; elemental semiconductors; indium compounds; liquid crystal displays; silicon; thin film transistors; tin compounds; ITO; InSnO; LCD panels; Si; TFT-LCDs; aperture ratio; buried ITO electrode structure; defect reduction effect; pixel defect density; pixel size; process technology; Apertures; Bismuth; Brightness; Circuits; Costs; Electrodes; Indium tin oxide; Insulation; Production; Thin film transistors;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.293338

Filename

293338