DocumentCode
1104035
Title
The effects of substrate gettering on GaAs MESFET performance
Author
Wang, Faa-Ching ; Bujatti, Marina
Author_Institution
Ethyl Corporation, Garland, TX
Volume
32
Issue
12
fYear
1985
fDate
12/1/1985 12:00:00 AM
Firstpage
2839
Lastpage
2843
Abstract
An increase of about 40 percent in dc transconductance and RF gain of directly ion-implanted GaAs MESFET´s was observed when the substrates were subjected to an extrinsic gettering treatment before ion implantation. The gettering treatment consisted of mechanical damage on the backside of the wafer followed by a mild heat treatment. The relationship between material parameters and MESFET performance is discussed and a mechanism for the gettering action is proposed.
Keywords
Gallium arsenide; Gettering; Heat treatment; Impurities; Ion implantation; MESFETs; Microwave technology; Radio frequency; Threshold voltage; Transconductance;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1985.22424
Filename
1485170
Link To Document