• DocumentCode
    1104158
  • Title

    Self-aligned notched planar InP transferred-electron oscillators

  • Author

    Binari, S.C. ; Thompson, P.E. ; Grubin, H.L.

  • Author_Institution
    Naval Research Laboratory, Washington, DC
  • Volume
    6
  • Issue
    1
  • fYear
    1985
  • fDate
    1/1/1985 12:00:00 AM
  • Firstpage
    22
  • Lastpage
    24
  • Abstract
    A procedure is described for the fabrication of planar InP transferred-electron oscillators (TEO´s). In this procedure, a localized high resistivity region is self-aligned to the cathode contact. The self-aligned structure, which also included a selectively implanted n+ anode, produced a pulsed power output of 220 mW with an efficiency of 9.5 percent at 9.1 GHz and a CW power output of 80 mW with an efficiency of 5.3 percent at 5.5 GHz. This is the highest reported power output and efficiency for a planar transferred-electron device in this frequency range.
  • Keywords
    Anodes; Cathodes; Conductivity; Fabrication; Frequency; Indium phosphide; Metallization; Microwave devices; Oscillators; Silicon;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1985.26029
  • Filename
    1485182
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1104158