• DocumentCode
    1104565
  • Title

    MBE grown n+-i-δ(p+)-i-n+GaAs V-groove barrier transistor

  • Author

    Chang, C.Y. ; Wang, Y.H. ; Liu, W.C. ; Liao, S.A.

  • Author_Institution
    National Cheng Kung University, Tainan, Taiwan, China
  • Volume
    6
  • Issue
    3
  • fYear
    1985
  • fDate
    3/1/1985 12:00:00 AM
  • Firstpage
    123
  • Lastpage
    125
  • Abstract
    The three-terminal n+-i-δ(p+)-i-n+V-groove barrier transistor (VBT) has been successfully fabricated by molecular beam epitaxy (MBE). The base terminal is connected to the δ(p+), the thin p+layer, by depositing aluminum on the etched V-groove. The demonstrated device possesses high potential of ultra-high-frequency ( f_{r} > 30 -GHz), high-power, and low-noise capability due to carriers transporting by thermionic emission and being controlled by the base-emitter bias.
  • Keywords
    Aluminum; Delay effects; Epitaxial growth; Etching; Molecular beam epitaxial growth; Ohmic contacts; Photodetectors; Schottky diodes; Substrates; Thyristors;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1985.26067
  • Filename
    1485220
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1104565