• DocumentCode
    1104816
  • Title

    High-voltage planar structure using SiO2-SIPOS-SiO2film

  • Author

    Mimura, A. ; Oohayashi, M. ; Murakami, S. ; Momma, N.

  • Author_Institution
    Hitachi Limited, Hitachi, Ibaraki, Japan
  • Volume
    6
  • Issue
    4
  • fYear
    1985
  • fDate
    4/1/1985 12:00:00 AM
  • Firstpage
    189
  • Lastpage
    191
  • Abstract
    The BVCB0leakage current hFEwere studied for high-voltage planar transistors which had three kinds of passivation films; SiO2-semi-insulating polycrystalline silicon (SIPOS)-SiO2; SIPOS-SiO2; and SiO2-phosphosilicate glass (PSG)-SiO2. The SiO2-SIPOS-SiO2type had a lower leakage current (surface generation current) and higher hFEthan the conventional SIPOS-SiO2type. The SiO2-SIPOS-SiO2type also had the highest BVCB0due to the field-plate effect.
  • Keywords
    Glass; Helium; Insulation; Leakage current; Maintenance; Passivation; Semiconductor device reliability; Semiconductor films; Silicon; Surface contamination;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1985.26092
  • Filename
    1485245
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1104816