• DocumentCode
    110521
  • Title

    Scaling of Data Retention Statistics in Phase-Change Random Access Memory

  • Author

    Yongwoo Kwon ; Byoungnam Park ; Dae-Hwan Kang

  • Author_Institution
    Dept. of Mater. Sci. & Eng., Hongik Univ., Seoul, South Korea
  • Volume
    36
  • Issue
    5
  • fYear
    2015
  • fDate
    May-15
  • Firstpage
    454
  • Lastpage
    456
  • Abstract
    A scaling law on data retention statistics is presented for sub-20-nm phase-change random access memory with a confined cell structure. Nucleation and growth was modeled with phase-field method. Universality encompassing cell size, temperature, and active phase-change material was found.
  • Keywords
    phase change materials; phase change memories; statistical analysis; active phase-change material; confined cell structure; data retention statistic scaling; phase-change random access memory; phase-field method; Crystallization; Kinetic theory; Phase change random access memory; Temperature dependence; Phase-change random access memory (PC-RAM); data retention; modeling; phase-change random access memory (PCRAM);
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2015.2414952
  • Filename
    7064709
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=110521