DocumentCode
1105212
Title
Transport across a high—low barrier and its influence on specific contact resistivity of a metal—n-GaAs ohmic system
Author
Gupta, R.P. ; Khokle, W.S.
Author_Institution
Central Electronics Engineering Research Institute, Pilani, India
Volume
6
Issue
6
fYear
1985
fDate
6/1/1985 12:00:00 AM
Firstpage
300
Lastpage
303
Abstract
Thermionic emission is hypothesized as a mechanism of carrier transport across the high-low barrier of a metal-semiconductor (M-S) ohmic junction. The barrier resistance, based on this theory is calculated and combined with tunneling resistance of the M-S junction to evaluate specific contact resistivity of ohmic contact to n-GaAs. The theoretical results interpret the published experimental data convincingly and thus validate the proposed mechanism of thermionic emission.
Keywords
Ballistic transport; Conductivity; Contact resistance; Electrons; Epitaxial growth; Gallium alloys; Molecular beam epitaxial growth; Ohmic contacts; Surface resistance; Tunneling;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/EDL.1985.26132
Filename
1485285
Link To Document