DocumentCode
1105323
Title
Modeling for an AlGaAs/GaAs heterostructure device using Monte Carlo simulation
Author
Tomizawa, M. ; Oshii, A.Y. ; Yokoyama, K.
Author_Institution
Nippon Telegraph and Telephone Corporation, Kanagawa, Japan
Volume
6
Issue
7
fYear
1985
fDate
7/1/1985 12:00:00 AM
Firstpage
332
Lastpage
334
Abstract
Two-dimensional electron gas behavior in an AlGaAs/GaAs heterostructure FET has been analyzed using the Monte Carlo method. In the channel region, it is assumed that the electrons are subjected to a two-dimensional scattering process. In the other regions, three-dimensional scattering rates are assumed. It is predicted that, in an actual device with 1.20-µm gate length, the transconductance of 250 and 450 mS/mm can be attained at 300 and 77 K, respectively. More efficient performance is possible with improvements in the device structure.
Keywords
Electrons; FETs; Gallium arsenide; Heterojunctions; Impurities; Phonons; Scattering parameters; Schottky barriers; Temperature; Threshold voltage;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/EDL.1985.26145
Filename
1485298
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