DocumentCode
1105505
Title
Longitudinal analysis of semiconductor lasers with low reflectivity facets
Author
Baets, Roel ; Van De Capelle, Jean-Pierre ; Lagasse, P.E.
Author_Institution
Univ. of Gent, Gent, Belgium
Volume
21
Issue
6
fYear
1985
fDate
6/1/1985 12:00:00 AM
Firstpage
693
Lastpage
699
Abstract
An analysis is made of longitudinal effects in semiconductor lasers with low facet reflectivities. For this purpose, a self-consistent model is used based on the beam propagation method, which takes into account both the lateral and longitudinal dimension. The calculations show that longitudinal effects have a significant influence on the output fields in the laser.
Keywords
Laser resonators; Semiconductor lasers; Electrons; Geometrical optics; Helium; Laser beams; Laser modes; Laser theory; Optical propagation; Power lasers; Reflectivity; Semiconductor lasers;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/JQE.1985.1072696
Filename
1072696
Link To Document