DocumentCode
1105534
Title
Carrier loss resulting from Auger recombination in InGaAsP/InP double heterojunction laser diodes: Spectroscopy of 950 nm high energy emission
Author
Zhuang, Weihua ; Zheng, Baozhen ; Xu, Junying ; Li, Yuzhang ; Xu, Jizhong ; Chen, Peili
Author_Institution
Institute of Semiconductors, Academia Sinica, Beijing, China
Volume
21
Issue
6
fYear
1985
fDate
6/1/1985 12:00:00 AM
Firstpage
712
Lastpage
715
Abstract
From 1.3 μm stripe InGaAsP/InP DH lasers, we observed a 950 nm emission band which originates from band-to-band recombination in InP confinement layers. This experimental result can be well explained by considering the overflow of injected carriers from InGaAsP into InP. The overflowed energetic carriers were created by Auger recombination in InGaAsP.
Keywords
Gallium materials/lasers; Carrier confinement; DH-HEMTs; Diode lasers; Heterojunctions; Indium phosphide; Laser stability; Pulse measurements; Spectroscopy; Temperature dependence; Threshold current;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/JQE.1985.1072699
Filename
1072699
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