• DocumentCode
    1105583
  • Title

    Monte Carlo simulation of electron transport efficiency of an InGaAs/InP hot-electron transistor

  • Author

    Ohnishi, H. ; Yokoyama, N. ; Nishi, H.

  • Author_Institution
    Fujitsu Limited, Atsugi, Japan
  • Volume
    6
  • Issue
    8
  • fYear
    1985
  • fDate
    8/1/1985 12:00:00 AM
  • Firstpage
    403
  • Lastpage
    404
  • Abstract
    Electron transport efficiency of an InGaAs/InP hot-electron transistor (HET) is determined by a Monte Carlo method including alloy scattering in an InGaAs base. Results are compared with those of a GaAs/AlGaAs HET. It is found that the InGaAs/InP HET offers a higher current gain than that of a GaAs/AlGaAs HET by an order of magnitude.
  • Keywords
    Electrons; Equations; Gallium arsenide; Heterojunctions; Indium gallium arsenide; Indium phosphide; Kinetic energy; Optical scattering; Phonons; Temperature;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1985.26170
  • Filename
    1485323
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1105583