PMOSFET Reliability Study for Direct Silicon Bond (DSB) Hybrid Orientation Technology (HOT)

Author

Huang, Yao-Tsung ; Pinto, Angelo ; Lin, Chien-Ting ; Hsu, Che-Hua ; Ramin, Manfred ; Seacrist, Mike ; Ries, Mike ; Matthews, Kenneth ; Nguyen, Billy ; Freeman, Melissa ; Wilks, Bruce ; Stager, Chuck ; Johnson, Charlene ; Denning, Laurie ; Bennett, Joe ; J

Author_Institution

United Microelectron. Corp., Hsinchu

Volume

28

Issue

9

fYear

2007

Firstpage

815

Lastpage

817

Abstract

The use of hybrid orientation technology with direct silicon bond wafers consisting of a (110) crystal orientation layer bonded to a bulk (100) handle wafer provides exciting opportunities for easier migration of bulk CMOS designs to higher performance materials, particularly (110) Si for PMOSFETs for higher hole mobility. In this letter, a 3times mobility improvement and 36% drive current gain were achieved for PMOSFETs on (110) substrates. A systematic investigation of PMOSFET reliability was conducted, and significant degradation of negative bias temperature instability lifetime on (110) orientation was observed due to higher density of dangling bonds. We also report the crystal orientation dependence on ultrathin nitrided gate oxide time-dependent dielectric breakdown.

Keywords

MOSFET; semiconductor device reliability; solid phase epitaxial growth; CMOS design; PMOSFET reliability; Si; amorphization and templated recrystallization; bulk handle wafer; crystal orientation layer; direct silicon bond; hole mobility; hybrid orientation technology; negative bias temperature instability; solid phase epitaxy; ultrathin nitrided gate oxide time-dependent dielectric breakdown; CMOS technology; Conducting materials; Crystalline materials; Degradation; Dielectric breakdown; Dielectric substrates; MOSFET circuits; Negative bias temperature instability; Silicon; Wafer bonding; Amorphization and templated recrystallization (ATR); direct Si bond (DSB); hybrid orientation technology (HOT); reliability; solid phase epitaxy;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2007.902613

Filename

4294057