• DocumentCode
    1105855
  • Title

    Over 1.3 μm CW laser emission from InGaSb quantum-dot vertical-cavity surface-emitting laser on GaAs substrate

  • Author

    Yamamoto, N. ; Akahane, K. ; Gozu, S. ; Ohtani, N.

  • Author_Institution
    Basic & Adv. Res. Dept., Nat. Inst. of Inf. & Commun. Technol., Tokyo, Japan
  • Volume
    40
  • Issue
    18
  • fYear
    2004
  • Firstpage
    1120
  • Lastpage
    1121
  • Abstract
    An Sb-based quantum-dot vertical-cavity surface-emitting laser (QD-VCSEL) operating in the 1.3 μm optical communication waveband is presented. A QD-VCSEL containing high-density InGaSb QDs in the active region is fabricated on GaAs substrate. The density of InGaSb QDs is drastically increased using a new method of an Si atom irradiation technique. A long-wavelength laser emission at 1.34 μm is successfully achieved on the InGaSb QD-VCSEL in CW operation at room temperature.
  • Keywords
    III-V semiconductors; gallium compounds; indium compounds; optical communication equipment; quantum dot lasers; surface emitting lasers; 1.34 micron; CW laser emission; GaAs substrate; InGaSb; InGaSb QD-VCSEL; InGaSb quantum-dot vertical-cavity surface-emitting laser; Si atom irradiation; optical communication waveband; room temperature;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20045894
  • Filename
    1335008
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1105855