• DocumentCode
    1105906
  • Title

    Specific contact resistivity of TiSi2to P+and n+junctions

  • Author

    Hui, J. ; Wong, S. ; Moll, J.

  • Author_Institution
    Hewlett Packard Laboratories, Palo Alto, CA
  • Volume
    6
  • Issue
    9
  • fYear
    1985
  • fDate
    9/1/1985 12:00:00 AM
  • Firstpage
    479
  • Lastpage
    481
  • Abstract
    Specific contact resistivities of the Al/TiW/TiSi2/Si system are characterized. It is found that without a TiW barrier layer, Al can penetrate through the TiSi2layer and significantly affect the TiSi2/Si interfacial contact resistance. Intrinsic TiSi2contact resistivities to n+and p+silicon are characterized with a TiW barrier between the silicide and the aluminum. TiSi2contact resistivity to n+silicon is found to be about one order of magnitude lower than that of Al to n+silicon. However, TiSi2to p+silicon contact resistivity is higher than that of Al to p+silicon and is very sensitive to the boron implant dose.
  • Keywords
    Aluminum; Artificial intelligence; Conductivity; Contact resistance; Electrical resistance measurement; Implants; MOS devices; Silicides; Silicon; Titanium;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1985.26199
  • Filename
    1485352
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1105906