• DocumentCode
    1106107
  • Title

    Low-resistance ohmic contacts to p-type GaAs using Zn/Pd/Au metallization

  • Author

    Brooks, R.C. ; Chen, C.L. ; Chu, A. ; Mahoney, L.J. ; Mavroides, J.G. ; Manfra, M.J. ; Finn, M.C.

  • Author_Institution
    Raytheon Company, Lexington, MA
  • Volume
    6
  • Issue
    10
  • fYear
    1985
  • fDate
    10/1/1985 12:00:00 AM
  • Firstpage
    525
  • Lastpage
    527
  • Abstract
    We have fabricated the low resistance ohmic contacts to p-type GaAs. Specific contact resistances as low as 7 × 10-7Ω.cm2have been obtained for contacts prepared by heat treating Zn/Pd/Au metallizations deposited on p-type epitaxial GaAs layers with an acceptor concentration of 1.5 × 1019cm-3. These contacts are reproducible, simple to fabricate, exhibit excellent adhesion, and have a uniformly smooth surface morphology.
  • Keywords
    Adhesives; Contact resistance; Gallium arsenide; Gold; Metallization; Ohmic contacts; Resistance heating; Surface morphology; Surface treatment; Zinc;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1985.26217
  • Filename
    1485370
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1106107