DocumentCode
1106116
Title
Method for extracting series resistance in MOS devices using Fowler-Nordheim plot
Author
Miranda, E.
Author_Institution
Dept. d´´Enginyeria Electron., Univ. Autonoma de Barcelona, Spain
Volume
40
Issue
18
fYear
2004
Firstpage
1153
Lastpage
1154
Abstract
A new method for determining the series resistance affecting the tunnelling current in MOS devices is presented. The proposed approach consists of considering the effect of the potential drop associated with this resistance on the Fowler-Nordheim tunnelling expression. The resistance is found by forcing the highest possible linearity of the Fowler-Nordheim plot.
Keywords
MIS capacitors; electrical resistivity; semiconductor device models; tunnelling; Fowler-Nordheim plot; Fowler-Nordheim tunnelling; MOS devices; extracting series resistance; tunnelling current;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20045581
Filename
1335033
Link To Document