• DocumentCode
    1106356
  • Title

    Formation of TiN/TiSi2/p+-Si/n-Si by rapid thermal annealing (RTA) silicon implanted with boron through titanium

  • Author

    Delfino, M. ; Broadbent, E.K. ; Morgan, A.E. ; Burrow, B.J. ; Norcott, M.H.

  • Author_Institution
    Philips Research Laboratories, Sunnyvale, CA
  • Volume
    6
  • Issue
    11
  • fYear
    1985
  • fDate
    11/1/1985 12:00:00 AM
  • Firstpage
    591
  • Lastpage
    593
  • Abstract
    A low temperature method of fabricating conductive (3.5 Ω/ sq.) p+/n junction diodes possessing excellent I-V characteristics with reverse-bias leakage less than -3 nA.cm-2at -5 V is described. Single crystal n-type 〈100〉 Si is implanted with 60 keV11B+through 0.028-µm thick sputtered Ti film. Rapid thermal annealing (RTA) in an N2ambient simultaneously forms a 0.36-µm deep p+/n junction and a 0.063-µm thick bilayer of TiN and TiSi2with a resistivity of 22 µΩ.cm. The electrical properties of these diodes are not degraded by annealing for 30 min at 500°C, suggesting that the outer layer of TiN is an effective diffusion barrier between TiSi2and Al.
  • Keywords
    Boron; Diodes; Etching; Rapid thermal annealing; Silicides; Silicon; Temperature; Thermal conductivity; Tin; Titanium;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1985.26241
  • Filename
    1485394
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1106356