• DocumentCode
    110687
  • Title

    Investigation on Switching Energy Losses in Reversely Switched Dynistor

  • Author

    Haiyang Wang ; Xiaoping He ; Weiqing Chen ; Linshen Xie ; Jingzhi Zhou ; Binjie Xue ; Fan Guo ; Guowei Zhang ; Zhiqiang Chen ; Zhengzhong Zeng

  • Author_Institution
    Northwest Inst. of Nucl. Technol., Xi´an, China
  • Volume
    29
  • Issue
    4
  • fYear
    2014
  • fDate
    Apr-14
  • Firstpage
    1553
  • Lastpage
    1556
  • Abstract
    This paper presents theoretical and experimental results on the energy loss characteristics of reversely switched dynistor (RSD) under high-current conditions. Theoretical analysis was performed based on a 1-D modified model by taking account into the carrier-carrier scattering effect and auger recombination effect during the conducting process. The experimental results of energy losses in RSD at various amplitudes of high pulse current were accurately obtained using the direct current injection method. The typical experimental results show that a single RSD has a voltage drop of approximately 9 V with a pulse current of 150 kA, transferred charge of 26.5 C. The theoretical calculated voltage drop based on 1-D modified model is approximately 7.7 V under the same conditions. The theoretical results based on the 1-D modified model almost agree well with the experimental results.
  • Keywords
    Auger effect; electric potential; electron-hole recombination; losses; power semiconductor switches; 1D modified model; Auger recombination effect; RSD; carrier-carrier scattering effect; conducting process; current 150 kA; direct current injection method; energy loss characteristics; high pulse current; high-current conditions; reversely switched dynistor; switching energy losses; voltage drop; Current measurement; Energy loss; Plasmas; Power dissipation; Pulse generation; Switches; Voltage measurement; Energy loss; high current; pulsed power; reversely switched dynistor (RSD); solid-state switches;
  • fLanguage
    English
  • Journal_Title
    Power Electronics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0885-8993
  • Type

    jour

  • DOI
    10.1109/TPEL.2013.2279072
  • Filename
    6589016