• DocumentCode
    1106984
  • Title

    Computer study of a high-voltage a p-π-n--n+diode and comparison with a field-limiting ring structure

  • Author

    Boisson, Viviane ; Le Helley, Michel ; Chante, Jean-Pierre

  • Author_Institution
    IBM, Bd. John Kennedy, Corbeil-Essonnes, France
  • Volume
    33
  • Issue
    1
  • fYear
    1986
  • fDate
    1/1/1986 12:00:00 AM
  • Firstpage
    80
  • Lastpage
    84
  • Abstract
    The paper presents a two-dimensional numerical analysis of a high-voltage p-π-n--n+structure. The effect of the device parameters, such as the implanted dose of the π-region, the main junction depth, and the charges at the interface, is studied. A comparison between the p-π-n--n+and field-limiting ring structures is given.
  • Keywords
    Design methodology; Diodes; Doping profiles; Helium; Impurities; Laboratories; Manufacturing; Numerical analysis; P-n junctions; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1986.22441
  • Filename
    1485658
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1106984