High-Power and Low-Noise Mode-Locking Operation of Al-Quaternary Laser Diodes

Author

Stolarz, Piotr M. ; Pusino, Vincenzo ; Akbar, Jehan ; Mezosi, Gabor ; Lianping Hou ; Coleman, A. Catrina ; Marsh, John H. ; Kelly, Anthony E. ; Sorel, Marc

Author_Institution

Sch. of Eng., Univ. of Glasgow, Glasgow, UK

Volume

21

Issue

6

fYear

2015

fDate

Nov.-Dec. 2015

Firstpage

1

Lastpage

7

Abstract

We report on the design and experimental evaluation of AlGaInAs/InP multiquantum well epistructures for mode-locked emission at 1.5 μm. We show that mode-locked lasers fabricated on an optimized three quantum well active region with a low optical confinement factor deliver pulses with increased peak power and stability over a much wider biasing range than those fabricated using a standard five quantum well design. Sonogram measurements indicate that sub-ps symmetrical pulses with a substantially reduced linear blue chirp are generated up to nearly three times the laser current threshold.

Keywords

III-V semiconductors; aluminium compounds; chirp modulation; gallium arsenide; indium compounds; laser mode locking; laser noise; laser stability; optical fabrication; optical pulse generation; quantum well lasers; Al-quaternary laser diodes; AlGaInAs-InP; Sonogram measurements; high-power mode-locking operation; laser current threshold; linear blue chirp; low-noise mode-locking operation; mode-locked emission; mode-locked lasers; multiquantum well epistructures; optical confinement factor; quantum well active region; subps symmetrical pulse generation; wavelength 1.5 mum; Laser mode locking; Materials; Nonlinear optics; Optical fibers; Optical pulses; Radio frequency; Mode locked lasers; Pulse measurements; Quantum Well lasers; Semiconductor lasers; mode locked lasers; pulse measurements; quantum well lasers;

fLanguage

English

Journal_Title

Selected Topics in Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

1077-260X

Type

jour

DOI

10.1109/JSTQE.2015.2415196

Filename

7064738